Your cart is empty

Photodiodes Si APD Enhanced for 905nm 1130um Area

Weight:
0.001kg

Product Information

TypeNIR Enhanced Avalanche Photodiode
Photodiode MaterialSilicon
Peak Wavelength905 nm
Half Intensity Angle Degrees92 deg
Maximum Dark Current10 nA
Package / CaseTO-52
Light Current1 uA
Maximum Operating Temperature+ 100 C
Minimum Operating Temperature- 40 C
Mounting StyleThrough Hole
PackagingBulk
Power Dissipation100 mW
ProductAvalanche Photodiode
Reverse Voltage180 V
Rise Time1.3 ns
Sensitivity60 A/W
Factory Pack Quantity20


Call for Availability

Price for:  EachMinimum:  1

Target Price

Offer your acceptable price, and we may make you satisfied.Your Target Price

Technical Support

Technical Support

Customer Reviews

Write Review

Customer Q&A Exchange

Ask A Question