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MOSFET 650V 60A E-Mode GaN Preproduction Units

Part No.:
GS66516T-E01-TY
Manufacturer:

Product Information

Mounting StyleSMD/SMT
Vds - Drain-Source Breakdown Voltage650 V
Transistor PolarityN-Channel
Rds On - Drain-Source Resistance27 mOhms
Channel ModeEnhancement
Maximum Operating Temperature+ 150 C
BrandGaN Systems
Id - Continuous Drain Current60 A
Vgs th - Gate-Source Threshold Voltage1.6 V
PackagingTray
Product CategoryMOSFET
Qg - Gate Charge13 nC
Vgs - Gate-Source Breakdown Voltage+/- 10 V
ConfigurationSingle
TechnologyGaN
Minimum Operating Temperature- 55 C
RoHSDetails
ManufacturerGaN Systems



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