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100 V, 2.6 ohm, N-CHANNEL, Si, POWER, MOSFET

Part No.:
AP01N15GK-HF
Manufacturer:
Product Range:
Transistors (BJT)

Product Information

Terminal FormGULL WING
Power Dissipation Ambient-Max2.8 W
Package ShapeRECTANGULAR
StatusACTIVE
Package Body MaterialPLASTIC/EPOXY
Transistor Element MaterialSILICON
ConfigurationSINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max2.6 ohm
Transistor TypeGENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)2.8 A
Channel TypeN-CHANNEL
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min100 V
Transistor ApplicationSWITCHING
Surface MountYes
Case ConnectionDRAIN
Mfr Package DescriptionHALOGEN FREE AND ROHS COMPLIANT PACKAGE-4
Operating ModeENHANCEMENT
Number of Terminals4
Terminal PositionDUAL
Number of Elements1
Package StyleSMALL OUTLINE


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