0.85 A, 30 V, 1 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSF

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Product Information

Status	Transferred
Package Body Material	PLASTIC/EPOXY
Configuration	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Pulsed Drain Current-Max (IDM)	3 A
Terminal Form	THROUGH-HOLE
Operating Mode	ENHANCEMENT MODE
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Number of Terminals	14
Drain Current-Max (ID)	0.8500 A
Transistor Element Material	SILICON
Transistor Application	SWITCHING
Qualification Status	COMMERCIAL
JESD-30 Code	R-PDIP-T14
FET Technology	METAL-OXIDE SEMICONDUCTOR
Terminal Position	DUAL
Package Shape	RECTANGULAR
Number of Elements	4
Drain-source On Resistance-Max	1 ohm
Package Style	IN-LINE
DS Breakdown Voltage-Min	30 V
Surface Mount	NO

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