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MOSFET Top cooled 650V GaN Transistor

Part No.:
GS66508T-E02-TY
Manufacturer:

Product Information

Mounting StyleSMD/SMT
Vds - Drain-Source Breakdown Voltage650 V
Transistor PolarityN-Channel
Rds On - Drain-Source Resistance55 mOhms
Channel ModeEnhancement
Maximum Operating Temperature+ 150 C
BrandGaN Systems
Id - Continuous Drain Current30 A
Vgs th - Gate-Source Threshold Voltage1.6 V
PackagingTray
Product CategoryMOSFET
Qg - Gate Charge6.5 nC
Vgs - Gate-Source Breakdown Voltage10 V
ConfigurationSingle
TechnologyGaN
Minimum Operating Temperature- 55 C
RoHSDetails
ManufacturerGaN Systems



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