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MOSFET 100V 90A E-Mode GaN Preproduction Units

Part No.:
GS61008P-E05-TY
Manufacturer:

Product Information

Mounting StyleSMD/SMT
Vds - Drain-Source Breakdown Voltage100 V
Transistor PolarityN-Channel
Rds On - Drain-Source Resistance7.4 mOhms
Channel ModeEnhancement
TechnologyGaN
BrandGaN Systems
Id - Continuous Drain Current90 A
Vgs th - Gate-Source Threshold Voltage1.6 V
PackagingTray
Product CategoryMOSFET
Qg - Gate Charge12 nC
ConfigurationSingle
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
RoHSDetails
ManufacturerGaN Systems



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